BREAKDOWN PHENOMENA IN SEMICONDUCTORS AND SEMICONDUCTOR DEVICES: Static Avalanche Breakdown

摘要

Systematic studies of breakdown phenomena in solids began more than 80 years ago, in the early 1920s. Approximately at the same time it was found that the scenario for breakdown depends critically on the magnitude of the ratio dV{sub}0/dt, where V{SUB}0 is the bias applied to the structure and t is time. Over a very wide range of magnitudes of dV{sub}0/dt from very small (quasi-static) to fairly large, just the same "conventional" scenario is followed, that usually known simply as "breakdown", but if dV{sub}0/dt becomes extremely large the picture changes dramatically to that termed "dynamic breakdown".