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Method for producing nMOS and pMOS devices in CMOS processing
Method for producing nMOS and pMOS devices in CMOS processing
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机译:在CMOS工艺中生产nMOS和pMOS器件的方法
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摘要
The invention is related to a method for producing one or more nMOSFET devices and one or more pMOSFET devices on the same semiconductor substrate (1) comprising a Si active area (2) and a Ge active area (3). The source and drain regions (5,6) in the Si area are formed by amorphisation and doping, followed by Solid Phase Epitaxial Regrowth (SPER). This enables low thermal budget processing compatible with the Ge device, including concurrent dopant activation in the Si and Ge areas.
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