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METHOD FOR DETERMINING THE ACTIVE DOPING CONCENTRATION OF A DOPED SEMICONDUCTOR REGION

机译:确定掺杂半导体区域有效掺杂浓度的方法

摘要

A method (200) and system are described for optically determining a substantially fully activated doping profile. The substantially fully activated doping profile thereby is characterized by a set of physical parameters. The method (200) comprises obtaining a sample comprising a fully activated doping profile and a reference and obtaining (210, 230) photomodulated reflectance (PMOR) offset curve measurement data and DC reflectance measurement data for said sample comprising the fully activated doping profile and for said reference. The method also comprises determining (220, 240) values for the set of physical parameters of the doping profile based on both the photomodulated reflectance offset curve measurements and the DC reflectance measurements.
机译:描述了一种用于光学确定基本上完全激活的掺杂分布的方法(200)和系统。因此,基本上完全激活的掺杂分布的特征在于一组物理参数。方法(200)包括获得包括完全激活的掺杂轮廓和参考的样品,以及获得(210、230)包括完全激活的掺杂轮廓的所述样品的光调制反射率(PMOR)偏移曲线测量数据和DC反射率测量数据。说参考。该方法还包括基于光调制反射率偏移曲线测量值和DC反射率测量值来确定(220、240)掺杂轮廓的一组物理参数的值。

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