Some Physical Impurity Properties of Doped-Indirect Gap Semiconductors at Low and Intermediate Concentrations

摘要

Inclusions of the conduction-band minimal degeneracy in the behavior of the density of states, specific heat and the conductivity for the impurity system doping an indirect-gap semiconductor was done. Here some of these results, together with some physical reasoning to justify the success and fails of such a simple approach are presented. This degeneracy showed very different consequences in distinct physical properties. In particular, the analysis favors the picture of an Anderson-type transition in these materials, as is becoming generally accepted.