机译:前向栅极R-G电流方法:表征LDD MOSFET的横向轻掺杂区的一种简单新颖的技术
Institute of Micro-electronics,Peking University,Beijing 100871;
Institute of Micro-electronics,Peking University,Beijing 100871;
Institute of Micro-electronics,Peking University,Beijing 100871;
Institute of Micro-electronics,Peking University,Beijing 100871;
Institute of Micro-electronics,Peking University,Beijing 100871;
Gated-diode; R-G current; MOSFET; LDD region; Interface state; Interface state density; Characterization;