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Doping effect numerical comparison of band gap energy and active region range for GaN and GaAs based semiconductor

机译：掺杂效应GaN和GaAs半导体带隙能量和有源区范围的数值比较

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F A A Fajri; A F Ahmad Noorden; A Abdul Aziz;
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1. Band gap energy, nitrogen localized states and GaN-like phonon in heavily doped GaAsN grown by molecular beam epitaxy [J] . Ben Bouzid S., Bousbih F., Chtourou R., Solid State Communications . 2004,第1a2期

机译：分子束外延生长重掺杂GaAsN中的带隙能，氮局域态和类GaN声子
2. Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructures [J] . Rodrigues SCP., Sipahi GM., Scolfaro LMR., Journal of Physics. Condensed Matter . 2002,第23期

机译：p掺杂GaN / InGaN和GaAs / InGaAs半导体异质结构的空穴电荷局部化和能带结构
3. First-principles electronic structure of Mn-doped GaAs, GaP, and GaN semiconductors [J] . T C Schulthess, W M Temmerman, Z Szotek, Journal of Physics. Condensed Matter . 2007,第16期

机译：掺杂Mn的GaAs，GaP和GaN半导体的第一性原理电子结构
4. Prospects of wide band gap material ZB-GaN over low band gap GaAs-based IMPATT Devices [C] . Tripathy P.R., Panda A.K., Pati S.P. Computers and Devices for Communication, 2009. CODEC 2009 . 2009

机译：低带隙GaAs基IMPATT器件上宽带隙材料ZB-GaN的前景
5. Spectroscopic study of hafnium silicate alloys prepared by RPECVD: Comparisons between conduction/valence band offset energies and optical band gaps. [D] . Hong, Joon Goo. 2004

机译：RPECVD制备的硅酸alloy合金的光谱研究：导带/价带偏移能和光学带隙的比较。
6. Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration [O] . Jun Young Choi, Keun Heo, Kyung-Sang Cho, -1

机译：非晶SiZnSnO半导体带隙状态随Si掺杂浓度的变化
7. First Principles Electronic Structure of Mn doped GaAs, GaP, and GaN semiconductors [O] . Schulthess, T. C., Temmerman, W. M., Szotek, Z., 2006

机译：mn掺杂Gaas，Gap和GaN的第一原理电子结构半导体
8. Inductively Coupled Plasma Etching of III-V Semiconductors in BCl3-Based Chemistries: Part 1: GaAs, GaN, GaP, GaSb and AlGaAs; Applied Surface Science [R] . Abernathy, C. , Han, J. , Hobson, W. S. , 1998

机译：基于BCl3的化学中III-V半导体的电感耦合等离子体蚀刻：第1部分：Gaas，GaN，Gap，Gasb和alGaas;应用表面科学

Doping effect numerical comparison of band gap energy and active region range for GaN and GaAs based semiconductor

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