SURFACE ETCHING DEVICE FOR SEMICONDUCTOR SUBSTRATE, AND METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE HAVING UNEVEN SHAPE FORMED ON THE SURFACE THEREOF BY USING THE SURFACE ETCHING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a device for etching the surface of a mass-producible semiconductor substrate by using gas of ClF₃, XeF₂, BrF₃ and BrF₅.;SOLUTION: A device for etching the surface of a semiconductor substrate comprises a reaction chamber in which the pressure can be reduced to ambient pressure or less, a moving stage which is movable in the reaction chamber and on which a semiconductor substrate is mounted, a nozzle for jetting etching gas containing one or more gas selected from the group consisting of ClF₃, XeF₂, BrF₃ and BrF₅, a nozzle for jetting cooling gas containing nitrogen gas or inert gas to the semiconductor substrate, a cleaning chamber in which the pressure can be reduced to ambient pressure or less, a moving stage which is movable in the cleaning chamber and on which the semiconductor substrate is mounted, a nozzle for jetting etching gas containing one or more gas comprising pure water and hydrogen fluoride water to the surface of the semiconductor substrate, and a nozzle for jetting dry gas containing nitrogen gas or inert gas to the semiconductor substrate.;COPYRIGHT: (C)2013,JPO&INPIT