Semiconductor Substrate Surface Etching Device, and Method of Manufacturing Semiconductor Substrate Whereon Uneven Shapes Are Formed Upon Surface Using Said Device

摘要

semiconductor substrate and the exothermic reaction causing gas used as an etching gas, while, in mass production and to provide an etching device capable of corresponding to the semiconductor substrate surface to a challenge. A load lock chamber, the pressure to atmospheric pressure or less as etching chamber and unload lock chamber, and a transport mechanism for transporting the tray receiving the semiconductor substrate to the unload lock the load lock from the chamber via the etching chamber, the semiconductor substrate and / or a surface etching device of a semiconductor substrate having a cooling mechanism to cool the tray and provides a surface etching device having a plurality of nozzles for spraying an etching gas toward the semiconductor substrate surface housed in the tray in the etching chamber. ;