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SEMICONDUCTOR SUBSTRATE SURFACE ETCHING DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE WHEREON UNEVEN SHAPES ARE FORMED UPON SURFACE USING SAID DEVICE
SEMICONDUCTOR SUBSTRATE SURFACE ETCHING DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE WHEREON UNEVEN SHAPES ARE FORMED UPON SURFACE USING SAID DEVICE
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机译:半导体基板表面蚀刻装置以及使用辅助装置在表面上形成形状不均匀的情况下制造半导体基板的方法
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摘要
while using a gas that causes the semiconductor substrate and the heat generating reaction as an etching gas , compatible semiconductor substrate surface to mass production to be the problem to provide an apparatus for etching . A load lock chamber , the pressure in the etching chamber and the atmospheric pressure or less as possible , unload lock chamber , and a transport mechanism for transporting the tray accommodating the semiconductor substrate to the unload lock chamber from the load lock chamber via the etching chamber , the semiconductor substrate and / or a surface of a semiconductor substrate etching apparatus having a cooling mechanism for cooling the tray and provides a surface etching device having a plurality of nozzles for ejecting an etching gas toward the surface of the semiconductor substrate in the etching chamber accommodated in the tray . ;
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