首页> 外国专利> SEMICONDUCTOR SUBSTRATE SURFACE ETCHING DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE WHEREON UNEVEN SHAPES ARE FORMED UPON SURFACE USING SAID DEVICE

SEMICONDUCTOR SUBSTRATE SURFACE ETCHING DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE WHEREON UNEVEN SHAPES ARE FORMED UPON SURFACE USING SAID DEVICE

机译:半导体基板表面蚀刻装置以及使用辅助装置在表面上形成形状不均匀的情况下制造半导体基板的方法

摘要

while using a gas that causes the semiconductor substrate and the heat generating reaction as an etching gas , compatible semiconductor substrate surface to mass production to be the problem to provide an apparatus for etching . A load lock chamber , the pressure in the etching chamber and the atmospheric pressure or less as possible , unload lock chamber , and a transport mechanism for transporting the tray accommodating the semiconductor substrate to the unload lock chamber from the load lock chamber via the etching chamber , the semiconductor substrate and / or a surface of a semiconductor substrate etching apparatus having a cooling mechanism for cooling the tray and provides a surface etching device having a plurality of nozzles for ejecting an etching gas toward the surface of the semiconductor substrate in the etching chamber accommodated in the tray . ;
机译:在使用引起半导体基板和发热反应的气体作为蚀刻气体的同时,提供兼容的半导体基板表面以批量生产是一个问题,提供了一种蚀刻装置。装载锁定室,蚀刻室中的压力和尽可能大气压或更低的气压,卸载锁定室以及用于将容纳半导体衬底的托盘从装载锁定室经由蚀刻室传送到卸载锁定室的传送机构。 ,半导体基板和/或具有用于冷却托盘的冷却机构的半导体基板蚀刻设备的表面,并提供具有多个喷嘴的表面蚀刻装置,该喷嘴用于向蚀刻室内的半导体基板的表面喷射蚀刻气体。放在托盘中。 ;

著录项

  • 公开/公告号KR20130045943A

    专利类型

  • 公开/公告日2013-05-06

    原文格式PDF

  • 申请/专利权人 PANASONIC CORPORATION;

    申请/专利号KR20137007986

  • 申请日2012-02-22

  • 分类号H01L21/306;H01L21/677;

  • 国家 KR

  • 入库时间 2022-08-21 16:27:13

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