Method of driving GaN-based semiconductor light emitting element, method of driving GaN-based semiconductor light emitting element of image display device, method of driving planar light source device, and method of driving light emitting device

摘要

A method of driving a GaN-based semiconductor light emitting element formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, includes the steps of: starting light emission by the start of the injection of carrier; and then stopping the injection of the carrier before a light emission luminance value becomes constant.