GaN-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT LIGHT-EMITTING ELEMENT ASSEMBLY LIGHT-EMITTING APPARATUS METHOD OF MANUFACTURING GaN-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT METHOD OF DRIVING GaN-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND IMAGE DISPLAY APPARATUS

摘要

(C) a second GaN-based compound semiconductor layer of a p-type conductivity; (D) a second GaN-based compound semiconductor layer of a first GaN- (E) a second electrode electrically connected to the second GaN-based compound semiconductor layer; (F) an undoped GaN-based compound semiconductor; An impurity diffusion preventing layer for preventing diffusion of impurities into the active layer; (G) laminated structure or a p-type conductive third GaN-based compound semiconductor layer. Between the active layer and the second GaN-based compound semiconductor layer, an impurity diffusion preventing layer and a laminated structure are arranged in this order from the active layer side.;GaN, semiconductor, luminescence, active layer, impurity, lamination, adhesive layer, panel