POLISHING LIQUID FOR CMP, STORAGE LIQUID FOR POLISHING LIQUID FOR CMP, POLISHING METHOD, SEMICONDUCTOR SUBSTRATE AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a polishing liquid for CMP with which a barrier metal and a silicon-dioxide film can be fast polished while maintaining dispersion stability of abrasive grains and a low-k film can be polished at a suitable speed, and to provide a polishing liquid for CMP with which a silicon-dioxide film can be fast polished while maintaining abrasive dispersion stability and a problem of flatness such as seam and erosion can be suppressed.;SOLUTION: The polishing liquid for CMP contains a medium and abrasive grains dispersed in the medium. In the polishing liquid for CMP, the abrasive grains include silica grains X of which silanol group density is 3.0 to 5.0/nm² and of which aspect ratio is 1.3 or less, and silica grains Y of which silanol group density is 1.0 to 2.0/nm² and of which aspect ratio exceeds 1.3. A mass ratio of the silica grains X with respect to a total mass of the silica grains X and the silica grains Y is 20 to 95%.;COPYRIGHT: (C)2014,JPO&INPIT