CMP POLISHING LIQUID, METHOD FOR POLISHING SUBSTRATE, AND ELECTRONIC COMPONENT

摘要

PROBLEM TO BE SOLVED: To provide a CMP polishing liquid capable of increasing a polishing speed for a silicon oxide film and a silicon nitride film with respect to a polishing speed for a polysilicon film, and capable of being applied in a polishing step of polishing a silicon oxide film and silicon nitride film using a polysilicon film as a stopper film.;SOLUTION: In a CMP polishing liquid of the present invention, a first liquid and a second liquid are mixed together when used. The first liquid contains cerium abrasive grains, a dispersant and water, and the second liquid contains a polyacrylic acid compound, a surfactant, a pH adjusting agent, a phosphoric acid compound and water, and has a pH of 6.5 or higher. The first liquid and the second liquid are mixed together so that the content of the phosphoric acid compound is within a predetermined range. Also a CMP polishing liquid of the present invention contains cerium abrasive grains, a dispersant, a polyacrylic acid compound, a surfactant, a pH adjusting agent, a phosphoric acid compound and water, and has a phosphoric acid compound content within a predetermined range.;COPYRIGHT: (C)2013,JPO&INPIT