METHOD FOR DETECTING POLISHING END IN CMP POLISHING DEVICE, CMP POLISHING DEVICE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

According to the invention, the pre- determined place the spectral reflection spectrum of the polishing object in the polishing end point is reached , the polishing obtain the spectral reflection spectrum of the object during polishing , and the correlation coefficient with those of the first parameter . On the other hand , is that the sum of the absolute value of the difference between those of the primary differential value in the parameter 2. And , in the first range parameter is more than the predetermined value , the second parameter is chwihaeteul the minimum value , it is determined that the polishing end point . Accordingly, the reliability can be provided a polishing endpoint detection method in accordance with the high CMP polishing device .