Low-Temperature Fabrication of Transparent Conductive Contacts for p-GaN and n-GaN

摘要

A ternary transparent conductive oxide, indium zinc oxide (IZO), is formed as a thin film by co-sputtering zinc oxide with indium oxide at a deposition temperature between 25 and 200 C. Optionally, up to 1-2% Al may be added by various methods. The layers may be annealed at temperatures between 200 and 400 C. Measurements of IZO with 75-85 wt % In₂O₃ showed low resistivity and low visible absorbance, both of which were thermally stable up to 400 C.