Sintered body target for transparent conductive film fabrication, transparent conductive film fabricated by using the same, and transparent conductive base material comprising this conductive film formed thereon

摘要

A sintered body target for transparent conductive film fabrication is chiefly composed of Ga, In, and O; has a Ga content ranging from 49.1 at. % to 65 at. % with respect to all metallic atoms; is chiefly constructed from a β-GaInO₃ phase and an In₂O₃ phase; provides an In₂O₃ phase (400)/β-GaInO₃ phase (111) X-ray diffraction peak intensity ratio that is 45% or less; and has a density of 5.8 g/cm³ or more. A transparent conductive film obtained by using a sputtering technique is an amorphous oxide transparent conductive film chiefly composed of Ga, In, and O, so that a Ga content ranges from 49.1 at. % to 65 at. % with respect to all metallic atoms, a work function is 5.1 eV or more, and a refractive index for light with a wavelength of 633 nm ranges from 1.65 to 1.85.