首页>
外国专利>
Vertical III-V nanowire field-effect transistor using nanosphere lithography
Vertical III-V nanowire field-effect transistor using nanosphere lithography
展开▼
机译:使用纳米球光刻的垂直III-V纳米线场效应晶体管
展开▼
页面导航
摘要
著录项
相似文献
摘要
A vertical III-V nanowire Field-Effect Transistor (FET). The FET includes multiple nanowires or nanopillars directly connected to a drain contact, where each of the nanopillars includes a channel of undoped III-V semiconductor material. The FET further includes a gate dielectric layer surrounding the plurality of nanopillars and a gate contact disposed on a gate metal which is connected to the gate dielectric layer. Additionally, the FET includes a substrate of doped III-V semiconductor material connected to the nanopillars via a layer of doped III-V semiconductor material. In addition, the FET contains a source contact directly connected to the bottom of the substrate. By having such a structure, electrostatic control and integration density is improved. Furthermore, by using III-V materials as opposed to silicon, the current drive capacity is improved. Additionally, the FET is fabricated using nanosphere lithography which is less costly than the conventional photo lithography process.
展开▼