A METHOD FOR FORMING VERTICAL NANOWIRE OR NANOSHEET FIELD-EFFECT TRANSISTORS SIMULTANEOUS WITH HORIZONTAL FIELD-EFFECT TRANSISTORS

摘要

A method for forming a semiconductor device is disclosed. The method comprises forming, in a vertical channel field-effect transistor, FET, device region (10), a vertical channel field-effect transistor, FET, device (11) comprising a first semiconductor structure including a lower source/drain portion (12), an upper source/drain portion (14), a channel portion (13) extending vertically and intermediate the source/drain portions, and a gate structure (151) extending along the channel portion and, in a horizontal channel FET device region (20), a horizontal channel FET device (21) comprising a second semiconductor structure (120) including first source/drain portion (22), a second source/drain portion (24), a channel portion (23) extending horizontally and intermediate the source/drain portions, and a gate structure (153) extending across the channel portion. The vertical and horizontal devices are made simultaneously and the sacrificial gates on both transistor types are replaced with the final gates at the same time, see Fig. 18a.