A METHOD FOR FORMING A VERTICAL NANOWIRE OR NANOSHEET FIELD-EFFECT TRANSISTOR

摘要

According to an aspect of the present inventive concept there is provided a method for forming a semiconductor device comprising vertical channel field-effect transistor, FET, devices, the method comprising:forming on a substrate a plurality of semiconductor structures (110) protruding vertically from a lower source/drain semiconductor layer (112) of the substrate (102), further comprising a channel portion (114) and an upper source/drain portion (116) thereon, the semiconductor structures being arranged in an array having a plurality of rows and columns;between at least a subset of the rows, etching metal line trenches (126) parallel to the rows;forming metal lines (132) in the metal line trenches for contacting the lower source/drain layer;forming gate structures (134) enclosing semiconductor structure channel portions (114) located above the lower source/drain layer (112); andforming upper source/drain metal contacts (142) on semiconductor structure upper source/drain portions (116) located above the channel portions (114).