Vertical nanowire/nanosheet FETs with a horizontal channel for threshold voltage modulation

摘要

A new type of vertical nanowire(VNW)/nanosheet(VNS)FETs combining a horizontal channel(HC)with bulk/back-gate electrode configuration,including Bulk-HC and FD-SOI-HC VNWFET,is proposed and investigated by TCAD simulation.Comparisons were carried out between conventional VNWFET and the proposed devices.FD-SOI-HC VNWFET exhibits better Ion/Ioff ratio and DIBL than Bulk-HC VNWFET.The impact of channel doping and geometric parameters on the electrical character-istic and body factor(γ)of the devices was investigated.Moreover,threshold voltage modulation by bulk/back-gate bias was im-plemented and a largeγis achieved for wide range V_(th)modulation.In addition,results of I_(on)enhancement and Ioff reduction in-dicate the proposed devices are promising candidates for performance and power optimization of NW/NS circuits by adopting dynamic threshold voltage management.The results of preliminary experimental data are discussed as well.