Nitride semiconductor laser and nitride semiconductor laser device

摘要

The nitride semiconductor laser (1) comprises a first nitride semiconductor layer (20) and a light emitting layer (30) made of a nitride semiconductor formed on the first nitride semiconductor layer (20); A second nitride semiconductor layer (40) formed on the layer (30) and having a ridge portion (40a), and a ridge portion (40a) formed on the second nitride semiconductor layer (40) And an electrode member (50) wider than the electrode member (50) and a dielectric layer (60) made of SiO ₂ formed on the side surface of the ridge portion (40a), and the electrode member (50) and the dielectric layer (60) And the electrode member (50) is not in contact with the dielectric layer (60) by the space (70), and is in contact with the upper surface of the ridge (40a). ing.