首页> 美国政府科技报告 >III-V Semiconductor Quantum Well Lasers and Related Optoelectronic Devices (OnSilicon). Oxide-Defined Semiconductor Quantum Well Lasers and Optoelectrnic Devices: Al-Based III-V Native Oxides
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III-V Semiconductor Quantum Well Lasers and Related Optoelectronic Devices (OnSilicon). Oxide-Defined Semiconductor Quantum Well Lasers and Optoelectrnic Devices: Al-Based III-V Native Oxides

机译:III-V半导体量子阱激光器及相关光电器件(Onsilicon)。氧化物定义的半导体量子阱激光器和光电器件:al基III-V天然氧化物

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Measurements of the hole density in heavily carbon-doped GaAs and A1x,Gal-xAs asa function of the annealing temperature are presented. It is shown that the hole density increases and the hole mobility decreases after annealing at low temperatures (T < 550 deg C). However, higher annealing temperatures (T > 600 deg C) result in a reduction of the hole concentration reaching a maximum carrier concentration of = 5 x 1019 cm-3. These changes observed in the electrical properties can be explained by two mechanisms: (1) the passivation of carbon acceptors by hydrogen incorporated during growth; and (2) the change in the lattice site location of carbon atoms, which is dependent on the total carbon concentration.

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