Fabrication of Device Structure for Terahertz Quantum Cascade Laser based on III-Nitride semiconductors

摘要

We fabricated device structure for GaN/AlGaN terahertz quantum cascade laser (THz-QCL). In the growth of QC structure by radio-frequency molecular beam epitaxy, we successfully grew fine periodic QC structure by performing shutter control for the amount of material supply strictly. In the device processing for III-nitride semiconductors, we successfully fabricated surface plasmon waveguide typed THz-QCL device. Further, we performed current injection for the fabricated device. We for the first time observed the radiation from THz-QCL based on III-Nitride semiconductors at 7K in pulse mode.