A method for cleaning a compound semiconductor, a solution for cleaning a compound semiconductor, a method for manufacturing a compound semiconductor device, a method for manufacturing a gallium nitride substrate, a gallium nitride substrate

摘要

A method for rinsing a compound semiconductor which reduces burdens on the environment according to the present embodiment is provided. The method for rinsing the compound semiconductor includes a step of applying a treatment 4 for rinsing to a compound semiconductor, which contains gallium as a constituent element, at a temperature of 70 degrees centigrade or higher with a solution 17 containing purified water and sulfuric acid of less than 65 wt% in the purified water and having a hydrogen ion concentration of pH 2 or less and an oxidation-reduction potential of 0.6 volts or higher.