Method for rinsing compound semiconductor, solution for rinsing compound semiconductor containing gallium as constituent element, method for fabricating compound semiconductor device, method for fabricating gallium nitride substrate, and gallium nitride substrate

摘要

A method for rinsing a compound semiconductor, the method including a step of rinsing a compound semiconductor at a temperature of 80 degrees centigrade or higher with an aqueous solution of sulfuric acid of 50 wt % or less in purified water, the aqueous solution having a hydrogen ion concentration of pH 2 or less and an oxidation-reduction potential of 0.6 volts or higher, the compound semiconductor containing gallium as a constituent element, and the compound semiconductor having a surface of gallium nitride (GaN).