Modification of the Newton's Method for the Simulations of Gallium Nitride Semiconductor Devices

摘要

In this paper we present application of the Newton's method for simulation of gallium nitride semiconductor devices in the steady state. The drift-diffusion model of carrier transport in the semiconductor material is used. It consists of three nonlinear elliptic differential equations. We present a backtracking strategy for the coupled Newton's method, which takes into account the specific nature of the drift-diffusion equations and improves convergence of the method.