METHOD FOR MANUFACTURING TRENCH GATE OXIDE FOR SiC MOSFET

摘要

The objective of the present invention is to provide a method for forming a trench gate insulating film which represents high dielectric breakdown characteristics without excessively increasing the thickness of an interlayer insulating film. To this end, the method for forming a trench gate insulating film in a SiC substrate comprises the steps of: forming a gate trench on a SiC substrate on which a predetermined semiconductor region is formed; exposing SiC on the surface of the gate trench to O_2 to form a thermal oxide film; and nitriding the thermal oxide film.;COPYRIGHT KIPO 2019