There is provided a method for simultaneously etching a first region in which a silicon oxide film and a silicon nitride film are alternately stacked and a second region having a silicon oxide film having a film thickness larger than the film thickness of the silicon oxide film in the first region. The method of one embodiment includes the steps of generating a plasma of a first process gas including a fluorocarbon gas and a hydrofluorocarbon gas in a processing vessel of a plasma processing apparatus provided with an object to be processed, A process for producing a plasma of a second process gas including a hydrogen gas, a hydrofluorocarbon gas, and a nitrogen gas. In this method, the steps of generating the plasma of the first process gas and the process of generating the plasma of the second process gas are alternately repeated.
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