The Formation of Porous Structure in Silicon by the Methods of Metal-Assisted Chemical Etching and Electrochemical Etching

摘要

In present work porous structures with different geometrical parameters in silicon wafers were formed by the methods of metal-assisted chemical etching (MACE) and electrochemical etching. It has been found that using the MACE method with chemical solutions and etching parameters used in the present work, it is possible to purposefully form a porous structure in a layer up to 100 microns thick with a porosity from 24 to 57%, and using an electrochemical etching it is possible to obtain a porous structure with a porosity of 72% in a layer thick of 170 μm. It was concluded that the use of original chemical solutions and etching parameters for the manufacture of silicon samples with the required parameters of the porous structure is promising in order to study the possibility of their use as container materials for medicine drug.