GaAs GaN FIELD-EFFECT TRANSISTOR WITH PROTECTION DIODES OF GaAa BASED OR GaN BASED

摘要

The present invention relates to the improvement of the electrostatic discharge resistance of the field effect transistor (FET) used in the microwave band and the millimeter wave band. A field effect transistor with an electrostatic protection diode according to the present invention comprises a first FET and a two terminal electrostatic protection circuit connected between the first gate and the first source of the first FET, the two terminal electrostatic protection circuit comprising a first gate A first diode positioned on the side biased in the reverse direction when a voltage lower than the potential of the first source is applied to the first source, and having a reverse withstand voltage lower than the reverse withstand voltage between the first gate and the first source of the first FET; A diode pair positioned on the side biased in the forward direction when a voltage lower than the potential of the first source is applied to the gate, and connected to the first diode in series with the first diode; and a diode pair composed of the first diode and the second diode; And connected in series and formed using the same channel layer as the first FET.