GaN-BASED FIELD-EFFECT TRANSISTOR AND NITRIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a GaN-based field-effect transistor with reduced interface leakage at an element isolation portion.SOLUTION: A GaN-based field-effect transistor includes: a GaN-based stack (5) including a GaN-based channel layer (2) and a GaN-based barrier layer (3), and having hetero junction; an isolation region (30) for isolating an active region (10) of the GaN-based stack (5); and an electrode (31) for element isolation provided on the isolation region (30) and surrounding the active region (10).