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Shanghai Radio Factory 14. The First in the Country to Specialize in MOS Integrated Circuits. Ideal Semiconductor Devices, Field-Effect Transistors, and MOS Integrated Circuits.

机译：上海无线电厂14.全国第一家专注于mOs集成电路的无线电厂。理想的半导体器件，场效应晶体管和mOs集成电路。

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年度 1982
页码 1-7
总页数 7
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Industrial production; Semiconductors; Integrated circuits; Field effect transistors; China; Foreign technology; Translations;

机译：工业生产;半导体;集成电路;场效应晶体管;中国;国外技术;翻译;
入库时间 2022-08-29 11:32:35

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1. Performance of In/sub 0.53/Ga/sub 0.47/As and InP junction field-effect transistors for optoelectronic integrated circuits. I. Device analysis [J] . Lo D.C.W., Forrest S.R. Journal of Lightwave Technology . 1989,第6期

机译：In / sub 0.53 / Ga / sub 0.47 / As和InP结光电晶体管场效应晶体管的性能。一，设备分析
2. Performance of In/sub 0.53/Ga/sub 0.47/As and InP junction field-effect transistors for optoelectronic integrated circuits. II. Optical receiver analysis [J] . Lo D.C.W., Forrest S.R. Journal of Lightwave Technology . 1989,第6期

机译：In / sub 0.53 / Ga / sub 0.47 / As和InP结光电晶体管场效应晶体管的性能。二。光接收机分析
3. Uniformly Distributed Wideband Metal-Oxide-Semiconductor Field-Effect Transistor Model for Complementary Metal-Oxide-Semiconductor Radio-Frequency Integrated Cirsuits Applications [J] . Hsiao-Bin Liang, Yi-Hsun Tsou, Yo-Sheng Lin, Japanese journal of applied physics . 2008,第2issue1期

机译：互补金属氧化物半导体无线电频率综合应用的均匀分布宽带金属氧化物半导体场效应晶体管模型
4. 70-nm Impact-Ionization Metal-Oxide-Semiconductor (I-MOS) Devices Integrated with Tunneling Field-Effect Transistors (TFETs) [C] . Woo Young Choi, Jae Young Song, Jong Duk Lee, International Electron Devices Meeting . 2005

机译：与隧道场效应晶体管（TFET）集成的70-nm碰撞电离金属 - 氧化物半导体（I-MOS）器件
5. On the analysis, design, and modeling of electrostatic discharge protection devices for analog and radio-frequency integrated circuits. [D] . Joshi, Sopan Ashok. 2002

机译：用于模拟和射频集成电路的静电放电保护设备的分析，设计和建模。
6. Organic nanofibers integrated by transfer technique in field-effect transistor devices [O] . Luciana Tavares, Jakob Kjelstrup-Hansen, Kasper Thilsing-Hansen, 2011

机译：通过转移技术将有机纳米纤维整合到场效应晶体管器件中
7. Development of XRMF techniques for measurement of multi-layer film thicknesses on semiconductors for VLSI and ULSI integrated circuits. Final CRADA report for CRADA number Y-1292-0130 [O] . Carpenter, D.A., Golijanin, D.L., Wherry, D. 1997

机译：开发用于测量VLsI和ULsI集成电路半导体多层膜厚度的XRmF技术。 CRaDa编号Y-1292-0130的最终CRaDa报告

Shanghai Radio Factory 14. The First in the Country to Specialize in MOS Integrated Circuits. Ideal Semiconductor Devices, Field-Effect Transistors, and MOS Integrated Circuits.

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