METHOD AND APPARATUS FOR COMPENSATION OF INHERENT UNEVENNESS OF ELECTRIC CHARACTERISTIC AT FIELD-EFFECT TRANSISTOR IN INTEGRATED CIRCUIT AMONG PLURALITY OF INTEGRATED CIRCUITS.

摘要

PURPOSE: To operate an electronic circuit under optimum conditions without causing noise increase by generating reference signals for indicating the conducting of the reference transistor of an integrated circuit and generating a compensation current when the reference signals do not reach a conducting threshold value. CONSTITUTION: This compensation device 10 is composed of two sections 10a and 10b respectively connected to the transistors P1 and N1 of an inverter 11. The respective sections are provided with a reference generator 14 for generating the reference signals R (Ra and Rb), a threshold value generator 15 composed of two threshold value amplifiers 15t and 15f respectively provided with threshold values Tt and Tf, a switch 16 composed of the two switches 16t and 16f and a compensation circuit 17 composed of two current passages. Then, the reference signals Ra for indicating the conducting of the reference transistor P2 of the integrated circuit 12 are generated, the conducting threshold value Tt is stipulated, the reference signals are compared with the conducting threshold value and the compensation current is generated when the reference signals do not reach the conducting threshold value. Thus, a current flowing to a bus 13 is practically compensated regardless of the nonuniformity of the electric characteristics of a P-MOS transistor.