HIGHLY DIELECTRIC FILM, AND UTILIZING THE SAME, FIELD-EFFECT TRANSISTOR AND SEMICONDUCTOR INTEGRATED CIRCUIT APPARATUS, AND PROCESS FOR PRODUCING THE HIGHLY DIELECTRIC FILM

摘要

A high-dielectric-constant film including hafnium, wherein the above-mentioned high-dielectric-constant film includes deuterium at a ratio higher than the ratio of deuterium to hydrogen present in nature. In a field-effect transistor provided with the high-dielectric-constant film including hafnium, the interface state density at the interface between a silicon substrate and a gate dielectric film decreases and carrier mobility in the gate dielectric film increases. In the present invention, a high-dielectric-constant constant second dielectric film, which is a thin film including hafnium such as HfSiON or HfAlOx and including deuterium at a ratio higher than the ratio of deuterium to hydrogen present in nature, is used as the gate dielectric film of the field-effect transistor.