Uniformly Distributed Wideband Metal-Oxide-Semiconductor Field-Effect Transistor Model for Complementary Metal-Oxide-Semiconductor Radio-Frequency Integrated Cirsuits Applications

Hsiao-Bin Liang; Yi-Hsun Tsou; Yo-Sheng Lin; Chi-Chen Chen

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Uniformly Distributed Wideband Metal-Oxide-Semiconductor Field-Effect Transistor Model for Complementary Metal-Oxide-Semiconductor Radio-Frequency Integrated Cirsuits Applications

机译：互补金属氧化物半导体无线电频率综合应用的均匀分布宽带金属氧化物半导体场效应晶体管模型

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摘要

In this paper, a uniformly distributed wide-band metal-oxide-semiconductor field-effect transistor (MOSFET) model constructed by several same unit cells in parallel is presented. The kink phenomenon of scattering parameter S_(11) due to the distributed ga

机译：本文提出了一种由几个相同的单元单元并联构成的均匀分布的宽带金属氧化物半导体场效应晶体管（MOSFET）模型。分布ga引起的散射参数S_（11）的扭结现象

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《Japanese journal of applied physics》 |2008年第2issue1期|807-813|共7页
作者
Hsiao-Bin Liang; Yi-Hsun Tsou; Yo-Sheng Lin; Chi-Chen Chen;
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正文语种 eng
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MOSFETs; uniformly distributed; gate resistance; unit cell; kink phenomenon; S-parameters; current gain; unilateral gain;

机译：MOSFET;均匀分布;栅极电阻晶胞扭结现象S参数当前收益;单方面收益;

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2. A Study on Very High Performance Novel Balanced Fully Depleted Silicon-on-lnsulator Complementary Metal-Oxide-Semiconductor Field-Effect Transistors on Si(110) Using Accumulation-Mode Device Structure for Radio-Frequency Analog Circuits [J] . Weitao Cheng, Akinobu Teramoto, ChingFoa Tye, Japanese journal of applied physics . 2009,第4issue2期

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Uniformly Distributed Wideband Metal-Oxide-Semiconductor Field-Effect Transistor Model for Complementary Metal-Oxide-Semiconductor Radio-Frequency Integrated Cirsuits Applications

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