A Study on Very High Performance Novel Balanced Fully Depleted Silicon-on-lnsulator Complementary Metal-Oxide-Semiconductor Field-Effect Transistors on Si(110) Using Accumulation-Mode Device Structure for Radio-Frequency Analog Circuits

摘要

In this study, a very high performance novel balanced complementary metal-oxide-semiconductor (CMOS) has been successfully developed on the Si(110) surface by introducing the accumulation-mode (AM) device structure at the first time. The novel balanced CMOS consists of an AM n-MOSFET and an inversion-mode (IM) p-MOSFET based on the different performances of the AM n- and p-MOSFETs, and the mechanism has been revealed. The advanced characteristics of this novel balanced CMOS transistor on Si(110) surface have also been investigated for the first time. In this paper, we experimentally demonstrate the possibility of realizing a very high performance CMOS with larger current drivability in both the n- and p-MOSFETs on Si(110) than that in conventional CMOS on Si(100). Ideal inverter characteristics have been observed in this balanced CMOS on Si{110) with only half the occupancy area of the conventional CMOS on Si(100). In addition, 1/f noise in an AM n-MOSFET on Si(110) has been investigated and an obvious suppression has been confirmed in both the linear and saturation operation regions.