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Influence of Source/Drain Parasitic Resistance on Device Performance of Ultrathin Body III-V Channel Metal-Oxide-Semiconductor Field-Effect Transistors

机译：源极/漏极寄生电阻对超薄体III-V沟道金属氧化物半导体场效应晶体管器件性能的影响

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Maegawa Yosuke; Koba Shunsuke; Tsuchiya Hideaki; Ogawa Matsuto;
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年度 2011
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1. Influence of Source/Drain Parasitic Resistance on Device Performance of Ultrathin Body III—V Channel Metal-Oxide-Semiconductor Field-Effect Transistors [J] . Yosuke Maegawa, Shunsuke Koba, Hideaki Tsuchiya, Annales de l'I.H.P . 2011,第8期

机译：源极/漏极寄生电阻对超薄III-V沟道金属氧化物半导体场效应晶体管器件性能的影响
2. Achievement of low parasitic resistance in Ge n-channel metal-oxide-semiconductor field-effect transistor using an embedded TiN-source/drain structure [J] . Nagatomi Y., Tateyama T., Tanaka S., Semiconductor science and technology . 2017,第3期

机译：使用嵌入式TiN源/漏结构实现Ge n沟道金属氧化物半导体场效应晶体管的低寄生电阻
3. Source/Drain Engineering for ln_(0.7)Ga_(0.3)As N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors: Raised Source/Drain with In situ Doping for Series Resistance Reduction [J] . Xiao Gong, Hock-Chun Chin, Shao-Ming Koh, Japanese journal of applied physics . 2011,第4ISSUE2期

机译：ln_（0.7）Ga_（0.3）As N沟道金属氧化物半导体场效应晶体管的源极/漏极工程：带原位掺杂的高串联源极/漏极降低串联电阻
4. Embedded Metal Source/Drain (eMSD) for series resistance reduction in In0.53Ga0.47As n-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET) [C] . Subramanian Sujith, Ivana, Yee-Chia Yeo VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on . 2012

机译：嵌入式金属源/漏（eMSD），用于降低In0.53Ga0.47As n沟道超薄体场效应晶体管（UTB-FET）中的串联电阻
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors [O] . Yuanjie Lv, Zhaojun Lin, Lingguo Meng, 2012

机译：栅极长度与漏极-源极距离之比对AlGaN / AlN / GaN异质结构场效应晶体管中电子迁移率的影响
7. Influence of bulk bias on negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin SiON gate dielectrics [O] . Shiyang Zhu, Anri Nakajima, Takuo Ohashi, 2006

机译：大偏压对具有超薄栅极电介质P沟道金属氧化物半导体场效应晶体管负偏置温度不稳定性的影响
8. Self-Aligned, Extremely High Frequency III-V Metal-Oxide-Semiconductor Field-Effect Transistors on Rigid and Flexible Substrates. [R] . Wang, C., Chien, J., Fang, H., 2012

机译：在刚性和柔性基板上的自对准，极高频III-V金属氧化物半导体场效应晶体管。

Influence of Source/Drain Parasitic Resistance on Device Performance of Ultrathin Body III-V Channel Metal-Oxide-Semiconductor Field-Effect Transistors

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