Techniques for fabricating planar charge balanced (CB) metal-oxide-semiconductor field-effect transistor (MOSFET) devices

摘要

Aspects of the present disclosure are directed toward designs and methods of manufacturing semiconductor devices, such as semiconductor charge balanced (CB) devices or semiconductor super-junction (SJ) devices. The disclosed designs and methods are useful in the manufacture of CB devices, such as planar CB metal-oxide semiconductor field-effect transistor (MOSFET) devices, as well as other devices.