GAN-BASED MOS FIELD-EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a GaN-based MOSFET that is enabled to perform normally-off operation and can have its threshold voltage freely controlled.;SOLUTION: The GaN-based MOSFET 10 has a gate insulating film 15 formed between an electron traveling layer 13 made of p-GaN and a gate electrode 18. The gate electrode 18 is made of AlGaInP mixed crystal. The gate electrode 18 includes a first gate layer 19 made of p-type AlGaInP mixed crystal, a second gate layer 20 formed thereupon and made of p-type GaAs, and a metal layer (AuGe/Au electrode) 21 formed thereupon. The threshold voltage can be controlled by varying the mixed crystal ratio of the AlGaInP mixed crystal.;COPYRIGHT: (C)2011,JPO&INPIT