A lateral GaN-based enhancement junction field-effect transistor device and a preparation method therefor. According to the device, by means of grooving and epitaxial regrowth or ion implantation, multiple vertical strip structures p-GaN are obtained on an n-GaN substrate, and form multiple thin p-n junction lateral n-type channels with the n-GaN substrate; then, by means of the control of the channel thickness and p-type and n-type doping concentrations, the n-type channels are in the fully depleted state of the built-in electric field of a p-n junction under zero bias, that is, the device is in an off state, and a forward bias needs to be applied to make the channels in an on state, that is, the device has a positive threshold voltage. In addition, the multiple channels ensure the large current output of the device.
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