Mathematical model of a photodiode and photo receiving device on the field-effect transistor with p-n controlling junction as a current amplifier

机译：具有p-n控制结作为电流放大器的场效应晶体管上的光电二极管和光接收装置的数学模型

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The quantity ratio simulating the characteristics of a photodiode and photo receiving device on the field-effect transistor with p-n controlling junction as a current amplifier as a power function of input optical radiation is presented in the work.

机译：在工作中提出了一种数量比，该数量比模拟了场效应晶体管上的光电二极管和光接收器件的特性，其中p-n控制结作为电流放大器作为输入光辐射的功率函数。

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《Internet, 2007 Third IEEE/IFIP International Conference in Central Asia on》|2007年|P.1-2|共2页
会议地点 TashkentUzbekistan
作者
Yunusov; N.; Atametov; R.K.; Yuldasheva; Sh.N.;
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amplifiers; field effect transistors; p-n junctions; photodiodes; current amplifier; field-effect transistor; optical radiation; p-n controlling junction; photo receiving device; photodiode;

机译：放大器场效应晶体管； p-n结；光电二极管电流放大器场效应晶体管光学辐射p-n控制结；照片接收装置；光电二极管;

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1. Vertical Field-Effect Transistor with a Controlling GaAs-Based p-n Junction [J] . Vostokov N. V., Daniltsev V. M., Kraev S. A., Semiconductors . 2019,第10期

机译：具有控制GaAs的P-N结的垂直场效应晶体管
2. Comparative Study of Plasma-Charging Damage in High-k Dielectric and p-n Junction and Their Effects on Off-State Leakage Current of Metal-Oxide-Semiconductor Field-Effect Transistors [J] . Masayuki Kamei, Yoshinori Takao, Koji Eriguchi, Japanese journal of applied physics . 2011,第8ISSUE3期

机译：高k电介质和p-n结中等离子体充电损伤及其对金属氧化物半导体场效应晶体管的关态漏电流影响的比较研究
3. Field-effect transistor self-electrooptic effect device: integrated photodiode, quantum well modulator and transistor [J] . Miller D.A.B., Feuer M.D. IEEE Photonics Technology Letters . 1989,第3期

机译：场效应晶体管自电光效应器件：集成光电二极管，量子阱调制器和晶体管
4. Mathematical model of a photodiode and photo receiving device on the field-effect transistor with p-n controlling junction as a current amplifier [C] . Yunusov N., Atametov R.K., Yuldasheva Sh.N., IEEE/IFIP International Conference in Central Asia on Internet . 2007

机译：具有P-N控制结的场效应晶体管上光电二极管和光接收装置的数学模型作为电流放大器
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. A Graphene/Polycrystalline Silicon Photodiode and Its Integration in a Photodiode–Oxide–Semiconductor Field Effect Transistor [O] . Yu-Yang Tsai, Chun-Yu Kuo, Bo-Chang Li, 2020

机译：石墨烯/多晶硅硅光电二极管及其在光电二极管-氧化物-半导体场效应晶体管中的集成
7. Basic Modifications of "Floating" Differential Stages Based on Complementary Field-Effect Transistors with a Control p-n Junction [O] . Vladislav Chumakov, Nikolay Prokopenko, Ilja Pakhomov, 2021

机译：基于互补场效应晶体管的“浮动”差分阶段的基本修改，控制P-n结
8. JFET/SOS (Junction Field-Effect Transistor/Silicon-on-Sapphire) Devices: Gamma-Radiation-Induced Effects [R] . Halle, L. F., Zietlow, T. C., Barnes, C. E. 1988

机译：JFET / sOs（结型场效应晶体管/硅蓝宝石）器件：γ辐射诱导效应

Mathematical model of a photodiode and photo receiving device on the field-effect transistor with p-n controlling junction as a current amplifier

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