Plasmon resonances and rectifying of terahertz radiation in GaN and InGaAs-based field-effect transistors

摘要

The plasmon resonances in GaN and InGaAs-based heterojunction field effect transistors (FETs) are investigated by using the finite-difference method in combination with finite-element solution of electron densities, potential and carrier velocities. Our results predict a resonant behavior of photoresponse in the channel of these FETs at terahertz frequencies indicating potential application of these devices in THz field. In addition, the dynamic of plasma waves in the channel is investigated in detail.