High Electrostatic Discharge Protection Using Multiple Si:N/GaN and Si:N/Si:GaN Layers in GaN-Based Light Emitting Diodes

摘要

A high electrostatic discharge (ESD) protection of gallium nitride (GaN)-based light-emitting diodes (LEDs) grown using multiple Si:N/GaN nucleation layers and multiple Si:N/Si:GaN layers has been developed and demonstrated successfully. It is found that