SINGLE LATITUDINAL MODE GaN-BASED PLANE LIGHT EMITTING LASER DIODE INCLUDING LOWER DISTRIBUTED BRAGG REFLECTOR FORMED OF PAIRS OF GaN LAYERS AND AIR LAYERS AND UPPER DISTRIBUTED BRAGG REFLECTOR FORMED OF PAIRS OF DIELECTRIC LAYERS, AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A single latitudinal mode GaN-based plane light emitting laser diode and a method for manufacturing the same are provided to obtain a full reflectivity by forming a lower distributed Bragg reflector from pairs of GaN layers and air layers and an upper distributed Bragg reflector from pairs of dielectric layers. CONSTITUTION: A single latitudinal mode GaN-based plane light emitting laser diode comprises a lower distributed Bragg reflector, a resonator, and an upper distributed Bragg reflector(30) which are arranged on a semiconductor substrate(110). The lower distributed Bragg reflector is formed by laminating 3 to 5 pairs of GaN layers(21) having a relatively higher refractive index and air layers(22) having a relatively lower refractive index. The upper distributed Bragg reflector is formed by laminating 3 to 5 pairs of dielectric layers(32) having a relatively lower refractive index and dielectric layers(31) having a relatively higher refractive index. Each of the GaN layers, air layers, and dielectric layers has a thickness of λ/4n, wherein λ is the wavelength of generated light and n is the refractive index of materials constituting the reflectors.