Defect-free silicon germanium (SiGe) epitaxial growth in a low-k spacer cavity and method of fabricating same

摘要

A method is provided for cleaning a low-k spacer recess by a low-energy RF plasma at a given substrate temperature for error-free epitaxial growth of Si, SiGe, Ge, III-V and III-N and the resulting device. Embodiments include providing a substrate having a low-k spacer recess; cleaning the low-k spacer recess with a low-energy RF plasma at a substrate temperature between room temperature and 600 ° C; and forming an epitaxial film or an RSD in the low-k spacer cavity after the low-energy RF plasma cleaning.