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DEFECT FREE SILICON GERMANIUM (SiGe) EPITAXY GROWTH IN A LOW-K SPACER CAVITY AND METHOD FOR PRODUCING THE SAME
DEFECT FREE SILICON GERMANIUM (SiGe) EPITAXY GROWTH IN A LOW-K SPACER CAVITY AND METHOD FOR PRODUCING THE SAME
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机译:低k晶格腔中的缺陷自由硅锗(SiGe)外延生长及其制备方法
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摘要
A method of cleaning a low-k spacer cavity by a low energy RF plasma at a specific substrate temperature for a defect free epitaxial growth of Si, SiGe, Ge, III-V and III-N and the resulting device are provided. Embodiments include providing a substrate with a low-k spacer cavity; cleaning the low-k spacer cavity with a low energy RF plasma at a substrate temperature between room temperature to 600° C.; and forming an epitaxy film or a RSD in the low-k spacer cavity subsequent to the low energy RF plasma cleaning.
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