机译:在高迁移率沟道金属氧化物半导体场效应晶体管的体硅衬底上的应变硅锗梯度薄层上纯锗外延生长
Microelectronics Research Center Department of Electrical and Computer Engineering University of Texas at Austin 78712 Austin TX;
Microelectronics Research Center Department of Electrical and Computer Engineering University of Texas at Austin 78712 Austin TX;
Department of Chemical Engineering University of Texas at Austin 78712 Austin TX;
Department of Chemistry and Biochemistry University of Texas at Austin 78712 Austin TX;
Department of Chemistry and Biochemistry University of Texas at Austin 78712 Austin TX;
Department of Chemical Engineering University of Texas at Austin 78712 Austin TX;
Microelectronics Research Center Department of Electrical and Computer Engineering University of Texas at Austin 78712 Austin TX;
High-mobility metal-oxide-semiconductor field-effect transistor (MOSFET); germanium-on-silicon; ultra-high-vacuum chemical vapor deposition (UHVCVD); heterostructure;
机译:高迁移率沟道金属氧化物半导体场效应晶体管的体硅基板上应变硅-锗梯度薄层上的纯锗外延生长
机译:绝缘子上锗硅衬底上应变硅沟道中应变分布不均匀引起的应变硅金属氧化物半导体场效应晶体管的阈值电压变化
机译:器件兼容的砷化镓在具有薄(〜80 nm)Si_(1-x)Ge_x台阶缓变缓冲层的硅衬底上的分子束外延生长,用于高κⅢ-Ⅴ型金属氧化物半导体场效应晶体管的应用
机译:光学浅缺陷分析仪薄,应变硅锗外延层晶体缺陷的评价
机译:应变硅锗沟道PMOSFET的开发可集成到现有的硅锗HBT技术中。
机译:缩回:将类似外延的Pb(ZrTi)O3薄膜集成到硅中用于下一代铁电场效应晶体管
机译:硅锗(SiGe)衬底上带有应变硅(s-Si)沟道的短沟道双材料栅极(DMG)MOSFET阈值电压的分析模型