SOI STRUCTURE USING SILICON EPITAXIAL GROWTH METHOD AND FABRICATING METHOD THEREOF FOR REDUCING FABRICATING COST AND IMPROVING INSULATING FUNCTION BY FORMING INSULATOR AND TRENCH ON SILICON SUBSTRATE AND PERFORMING EPITAXIAL SILICON GROWTH PROCESS

摘要

PURPOSE: An SOI structure using a silicon epitaxial growth method and a fabricating method thereof are provided to reduce the fabricating cost and improve an insulating function by forming an insulator and a trench on a silicon substrate and performing an epitaxial silicon growth process. CONSTITUTION: An insulator is formed on a silicon wafer. An epitaxial trench is formed by patterning and etching the insulator. An epitaxial silicon is grown thereon after the epitaxial trench is formed. An STI(16) is formed by patterning the epitaxial silicon. A planarization process is performed. A semiconductor device(18-22) is formed.