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Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures
Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures
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机译:减少碳化硅外延生长中微管形成的方法以及所得的碳化硅结构
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摘要
A method is disclosed for producing epitaxial layers of silicon carbide that are substantially free of micropipe defects. The method comprises growing an epitaxial layer of silicon carbide on a silicon carbide substrate by liquid phase epitaxy from a melt of silicon carbide in silicon and an element that enhances the solubility of silicon carbide in the melt. The atomic percentage of that element predominates over the atomic percentage of silicon in the melt. Micropipe defects propagated by the substrate into the epitaxial layer are closed by continuing to grow the epitaxial layer under the proper conditions until the epitaxial layer has a thickness at which micropipe defects present in the substrate are substantially no longer reproduced in the epitaxial layer, and the number of micropipe defects in the epitaxial layer is substantially reduced.
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