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Replacement metal gate process for vertical transport field-effect transistor with self-aligned shared contacts
Replacement metal gate process for vertical transport field-effect transistor with self-aligned shared contacts
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机译:具有自对准共享触点的垂直传输场效应晶体管的替代金属栅极工艺
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摘要
A semiconductor structure includes a substrate, a bottom source/drain region disposed on a top surface of the substrate, and a plurality of fins disposed over a top surface of the bottom source/drain region. The fins provide vertical transport channels for one or more vertical transport field-effect transistors. The semiconductor structure also includes at least one self-aligned shared contact disposed between an adjacent pair of the plurality of fins. The adjacent pair of the plurality of fins includes a first fin providing a first vertical transport channel for a first vertical transport field-effect transistor and a second fin providing a second vertical transport channel for a second vertical transport field-effect transistor.
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